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- 제품
- SIC
- SiC MOSFETS
- ACM120B028TD
ACM120B028TD:
N-Channel Silicon Carbide Power MOSFET
1200V 38mΩ TO-247-3L Package N-Channel Silicon Carbide Power MOSFET
- 특징:
- G2 Wide bandgap SiC MOSFET technology
- Low Capacitances with High-Speed switching
제품 상세 정보
| AEC-Q101 Qualified |
Type | PD (W) | VDS_Max (V) | ID@Tc=25℃_Max (A) | VGS(th)_Typ (V) | RDS(ON)_Typ @VGS (Tc=25℃) (mΩ) |
Qg_Typ. (nC) |
|---|---|---|---|---|---|---|---|
| N | SiC MOSFET | 341 | 1200 | 83 | 2.6 | 38 | 66 |