碳化硅
Enabling more efficiency and reliable designs
Anbon Semiconductor's Silicon Carbide (SiC) product portfolio includes SiC MOSFETs from 650 V to 3300 V with a maximum junction temperature rating of 200°C, enabling more efficient and reliable designs.
New 4th-gen 650V, 1200V, 1700V SiC MPS Schottky diodes offer higher current density and lower forward voltage, with strong surge current and low reverse leakage. Robust design and quality control ensure stable performance in harsh conditions.
SiC PowerMOSFET
Features:
- High Breakdown Field
- High Junction temperature Operation
- Lower switching losses
- Lower Rds(on) resistance.
- High Switching Speed
- Fast and robust intrinsic body diode proved
SiC PowerSBD
Features:
- Temperature Independent Switching
- High Temperature Capability (Tj = 200 °C)
- Lower Forward Voltage
- High efficiency
- high switching frequency
SiC Technology
G1 SiC MOSFET
- Technology: Planner
- Vds: 1200V-3300V
- Rds(on): 25mΩ-1Ω
- Tj: -55-150°
- CVth: +20V/-5V
2018-2020
G2 SiC MOSFET
- Technology: Planner
- Vds: 650V-3300V
- Rds(on): 11mΩ-240mΩ
- Tj: -55-170°C
- CVth: +18V/-5V
2121-2022
G3 SiC MOSFET
- Technology: Planner
- Vds: 650V-2300V
- Rds(on): 7mΩ-40mΩ
- Tj: 55-220°C
- CVth: +18V/-5V
2023-2024
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| DC/DC | Motor | AI Server | UPS | PUMP | Laser print | Heating | Solar |