SiC Schottky
Powerful SiC Schottky
Anbon’s Silicon Carbide (SiC) Schottky Barrier Diodes offer industry-leading efficiency and reliability for high-performance power conversion. Ranging from 650V to 1200V in single and dual configurations, our diodes feature near-zero reverse recovery and an optimized forward voltage (V), significantly reducing power losses and simplifying thermal management.
SiC PowerSBD
Features:
- Temperature Independent Switching
- High Temperature Capability (Tj = 200 °C)
- Lower Forward Voltage
- High efficiency
- high switching frequency
Application
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| DC/DC | Motor | AI Server | UPS | PUMP | Laser print | Heating | Solar |