MOSFETS

Excellent SiC MOSFET Technology:

ANBON power MOSFETs feature advanced packaging technology, offering a wide breakdown voltage range (-100V to 1700V), low gate charge, and low on-resistance. Through optimized processes for high-voltage and low-voltage power MOSFETs, we have significantly enhanced power handling capabilities, delivering efficient solutions for our customers.

Key Features:

• Wide Voltage Range
• Low Gate Charge
• Low On-Resistance
• Fast Intrinsic Body Diode
• Multiple Packages

SiC MOSFET LineUP

• 20-30V Low-Voltage MOSFETs
  Featuring STripFET technology, low gate charge, low on-resistance, and multiple package options.
  Suitable for: Battery protection, load switches, DC-DC converters
• 30-200V Medium-Voltage MOSFETs
  N-channel power MOSFETs available in options ranging from small surface-mount to high-power packages.
  Suitable for: Synchronous rectification, power conversion, motor drives
• 200-700V High-Voltage MOSFETs
  Utilizing super-junction technology, optimized for hard-switching and resonant topologies, suitable for high-power applications.
• 700-1700V Ultra-High-Voltage MOSFETs
  MDmesh technology, excellent power handling capability, supporting high-efficiency solutions.
  Suitable for: Industrial power supplies, PV inverters, EV charging