Enhancement MOSFETS

Enabling more efficie'nt and reliable designs

Anbon Semiconductor's Silicon Carbide (SiC) product portfolio includes SiC MOSFETs from 650 V to 3300 V with a maximum junction temperature rating of 200°C, enabling more efficient and reliable designs.

New 4th-gen 650V, 1200V, 1700V SiC MPS Schottky diodes offer higher current density and lower forward voltage, with strong surge current and low reverse leakage. Robust design and quality control ensure stable performance in harsh conditions.

SiC PowerMOSFET

Features:

• Automotive-grade Qualified Devices (AEC-Q101)
• High temperature capability (Tj = 200 °C)
• Lower switching losses
• Lower Rds(on) resistance.
• high switching frequency
• Very fast and robust intrinsic body diode proved

SiC Power Schottky

Features:

• Automotive-grade Qualified Devices (AEC-Q101)
• High temperature capability (Tj = 200 °C)
• Lower switching losses
• Lower Rds(on) resistance.
• high switching frequency
• Very fast and robust intrinsic body diode proved

Sic Technology

G1 SiC MOSFET

• Technology: Planner
• Vds: 1200V-3300V
• Rds(on): 25mΩ-1Ω
• Tj: -55-150°
• CVth: +20V/-5V

2018-2020

G1 SiC MOSFET

• Technology: Planner
• Vds: 650V-3300V
• Rds(on): 11mΩ-240mΩ
• Tj: -55-170°C
• CVth: +18V/-5V

2121-2022

G1 SiC MOSFET

• Technology: Planner
• Vds: 650V-2300V
• Rds(on): 7mΩ-40mΩ
• Tj: 55-220°C
• CVth: +18V/-5V

2023-2024
 

G1 SiC MOSFET

• Technology: Planner
• Vds: 650V-2300V
• Rds(on): 7mΩ-40mΩ
• Tj: 55-220°C
• CVth: +18V/-5V

2026-2030