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Enhancement MOSFETS

Power MOSFETs

ANBON offers a complete portfolio of power MOSFETs ranging from 20 V to 1000 V, utilizing four core technologies: planar, trench, shielded gate trench (SGT), and super junction (SJ). Our solutions are engineered for high-efficiency power conversion and precise circuit control across industrial and general-purpose power applications.

By integrating advanced chip designs with high-performance packaging, ANBON delivers low RDS(on), high power density, and reliable thermal performance. These MOSFETs are widely used in industrial automation, consumer electronics, telecommunications, and renewable energy systems where long-term reliability and stable operation are required.

Trench MOSFET

Trench

Key Features:

  • Excellent current density
  • Reduced gate charge (Qg)
  • Good switching characteristics
  • Vertical channel structure
Planar MOSFET

Planar

Key Features:

  • Superior reliability
  • High ruggedness
  • Stable threshold voltage (Vth)
  • Low gate-to-drain capacitance (Crss)
SGT MOSFET

SGT

Key Features:

  • Very low RDS(on) to reduce conduction losses
  • Excellent performance in high-switching-frequency applications
  • High reliability at elevated temperatures
  • Excellent current density
Super Junction MOSFET

Super Junction (SJ)

Key Features:

  • Significantly reduced RDS(on)
  • Strong electric-field handling capability
  • Excellent current density
MOSFET Overview
MOSFET General Lineup
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