SiC MOSFETS
Powerful SiC MOSFETs
ANBON's silicon carbide MOSFET portfolio offers an extended voltage range from 650V to 3300V,featuring an advanced technology platform that combines excellent switching performance with very low on-state resistance per area.Bring the advantages of innovative wide bandgap materials into your next design.
G1 SiC
Features:
- Technology: Planer
- Vds: 1200V-3300V
- Rds(on): 25mΩ-1Ω
- Tj: -55-150°C
- Vth: +20V/-5V
G2 SiC
Features:
- Technology: Planer
- Vds: 650V-3300V
- Rds(on): 11mΩ-240mΩ
- Tj: -55-170°C
- Vth: +18V/-5V
G3 SiC
Features:
- Technology: Planer
- Vds: 650V-3300V
- Rds(on): 7mΩ-40mΩ
- Tj: -55-220°C
- Vth: +18V/-5V
G4 SiC+JFET Combo
Features:
- Technology: Trench
- Vds: 1200V-3300V
- Rds(on): 2x Lower than SiC
- Gate Driver:Compatible
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