SiC MOSFETS
Excellent SiC MOSFET Technology:
Bring the advantages of innovative wide bandgap materials (WBG) to your next design thanks to SiC MOSFETs. With an extended voltage range, from 650 to 3300 V, Anbon silicon carbide MOSFETs offer one of the most advanced technology platforms featuring excellent switching performance combined with very low Rdson per area.
Main features of our SiC MOSFETs include:
- Automotive-grade (AEC-Q101) qualified devices
- Very high temperature handling capability (max. TJ = 200 °C)
- Very high switching frequency operation and very low switching losses
- Low Rdson
- Very fast and robust intrinsic body diode
Our SiC MOSFET portfolio includes state-of-the-art packages (DFN, T2PAK-7, TO-247,TO-263 ETC..) specifically designed to meet the stringent requirements of automotive and industrial applications.
| DFN8*8 | TOLL | T2PAK | TO-2247-2/3/4 | TO-263-7L | 测试测试测试 | 测试测试测试 | 测试测试测试 |
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SiC MOSFET LineUP
- DFN 5*6 :VDS 65OV 800V 1200V
- DFN 8*8 :VDS 650V 800V 1200V
- T2PAK:VDS 650V 1200V
- TO-247-3 :VDS 650V 750V 1200V 1700V
- TO-247-4 :VDS 650V 750V 900V 1200V 3300V
- TO-252 :VDS 800V
- TO-263-7 :VDS 650V 1200V 1700V
- TOLL :VDS 650V 750V
Sic Technology
G1 SiC MOSFET
- Technology: Planner
- Vds: 1200V-3300V
- Rds(on): 25mΩ-1Ω
- Tj: -55-150°
- CVth: +20V/-5V
2018-2020
G1 SiC MOSFET
- Technology: Planner
- Vds: 650V-3300V
- Rds(on): 11mΩ-240mΩ
- Tj: -55-170°C
- CVth: +18V/-5V
2121-2022
G1 SiC MOSFET
- Technology: Planner
- Vds: 650V-2300V
- Rds(on): 7mΩ-40mΩ
- Tj: 55-220°C
- CVth: +18V/-5V
2023-2024