- 表紙
- 製品
- SIC
- SiC MOSFETS
- ACM120R165NM
ACM120R165NM:
N-Channel Silicon Carbide Power MOSFET
1200V 165mΩ DFN8*8 Package N-Channel Silicon Carbide Power MOSFET
- 特徴:
- G2 Wide bandgap SiC MOSFET technology
- Faster commutation and improved switching due to the additional Kelvin source pin
- Low Capacitances with High-Speed switching
製品詳細
| AEC-Q101 Qualified |
Type | PD (W) | VDS_Max (V) | ID@Tc=25℃_Max (A) | VGS(th)_Typ (V) | RDS(ON)_Typ @VGS (Tc=25℃) (mΩ) |
Qg_Typ. (nC) |
|---|---|---|---|---|---|---|---|
| N | SiC MOSFET | 128 | 1200 | 22 | 3 | 165 | 41 |