- 表紙
- 製品
- SIC
- SiC MOSFETS
- ACM220R080TH
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ACM220R080TH:
N-Channel Silicon Carbide Power MOSFET
2200V 80mΩ TO-263-7L Package N-Channel Silicon Carbide Power MOSFET
- 特徴:
- G3 Wide bandgap SiC MOSFET technology
- Faster commutation and improved switching due to the additional Kelvin source pin
- Low Capacitances with High-Speed switching
製品詳細
| AEC-Q101 Qualified |
Type | PD (W) | VDS_Max (V) | ID@Tc=25℃_Max (A) | VGS(th)_Typ (V) | RDS(ON)_Typ @VGS (Tc=25℃) (mΩ) |
Qg_Typ. (nC) |
|---|---|---|---|---|---|---|---|
| N | SiC MOSFET | 319 | 2200 | 46 | 3.2 | 80 | 81 |