- 表紙
- 製品
- SIC
- SiC Schottky
- ASZD010120D
ASZD010120D:
Silicon Carbide Schottky Diode
1200V 10A TO-252-2 Package Silicon Carbide Schottky Diode
- 特徴:
- High IFSM capability
- High power density
- Thermal stability up to 175 °C junction temperature
- Suffix "-H" indicates Halogen-free parts
製品詳細
| AEC-Q101 Qualified |
Type | IF (A) | VRRM (V) | VF@IF_Max (V) | IR@VRRM_Max (uA) | Qc (nC) | Number of Die (PCS) |
|---|---|---|---|---|---|---|---|
| N | SiC Schottky | 10 | 1200 | 1.7 | 100 | 48 | 1 |