icon ASZD010065A:

Silicon Carbide Schottky Diode

650V 10A TO-220-2 Package Silicon Carbide Schottky Diode

Features:
High IFSM capability
High power density
Thermal stability up to 175 °C junction temperature
Suffix "-H" indicates Halogen-free parts

Product details

AEC-Q101
Qualified
Type IF (A) VRRM (V) VF@IF_Max (V) IR@VRRM_Max (uA) Qc (nC) Number of Die (PCS)
N SiC Schottky 10 650 1.5 50 34 1