icon ASZD004065D:

Silicon Carbide Schottky Diode

650V 4A TO-252-2 Package Silicon Carbide Schottky Diode

特徴:
High IFSM capability
High power density
Thermal stability up to 175 °C junction temperature
Suffix "-H" indicates Halogen-free parts

製品詳細

AEC-Q101
Qualified
Type IF (A) VRRM (V) VF@IF_Max (V) IR@VRRM_Max (uA) Qc (nC) Number of Die (PCS)
N SiC Schottky 4 650 1.5 50 10.6 1