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ASZD004065D:
Silicon Carbide Schottky Diode
650V 4A TO-252-2 Package Silicon Carbide Schottky Diode
- Features:
- High IFSM capability
- High power density
- Thermal stability up to 175 °C junction temperature
- Suffix "-H" indicates Halogen-free parts
Product details
| AEC-Q101 Qualified |
Type | IF (A) | VRRM (V) | VF@IF_Max (V) | IR@VRRM_Max (uA) | Qc (nC) | Number of Die (PCS) |
|---|---|---|---|---|---|---|---|
| N | SiC Schottky | 4 | 650 | 1.5 | 50 | 10.6 | 1 |