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ACM065H026TD:
N-Channel Silicon Carbide Power MOSFET
650V 26mΩ TO-247-3L Package N-Channel Silicon Carbide Power MOSFET
- Features:
- G3 Wide bandgap SiC MOSFET technology
- Low Capacitances with High-Speed switching
Product details
| AEC-Q101 Qualified |
Type | PD (W) | VDS_Max (V) | ID@Tc=25℃_Max (A) | VGS(th)_Typ (V) | RDS(ON)_Typ @VGS (Tc=25℃) (mΩ) |
Qg_Typ. (nC) |
|---|---|---|---|---|---|---|---|
| N | SiC MOSFET | 333 | 650 | 99 | 3 | 26 | 74.5 |