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ACM120R007TE:
N-Channel Silicon Carbide Power MOSFET
1200V 7.6mΩ TO-247-4L Package N-Channel Silicon Carbide Power MOSFET
- Features:
- G2 Wide bandgap SiC MOSFET technology
- Faster commutation and improved switching due to the additional Kelvin source pin
- Low Capacitances with High-Speed switching
Product details
| AEC-Q101 Qualified |
Type | PD (W) | VDS_Max (V) | ID@Tc=25℃_Max (A) | VGS(th)_Typ (V) | RDS(ON)_Typ @VGS (Tc=25℃) (mΩ) |
Qg_Typ. (nC) |
|---|---|---|---|---|---|---|---|
| N | SiC MOSFET | 750 | 1200 | 200 | 2.9 | 7.6 | 560 |